Ion beam induced epitaxy experiments in silicon under channeling and random alignments

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 505-509

  Williams, J S ^a   Young, I M ^a   Conway, M J ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARBON; CRYSTALLIZATION; EPITAXIAL GROWTH; HELIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CHANNELING; ION BEAM INDUCED EPITAXIAL CRYSTALLISATION;

ION BEAMS;

EID: 0033900733     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00904-0     Document Type: Article

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