MD simulations of ion beam induced epitaxial crystallization at a-Si/c-Si interfaces: Interface structure and elementary processes of crystallization

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 375-380

  Weber, B ^a   Stock, D M ^a   Gartner K ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Amorphous crystalline interfaces; Ion induced crystallization; Molecular dynamics; Si

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); ION BEAMS; MOLECULAR DYNAMICS;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC); STILLINGER-WEBER POTENTIAL; TERSOFF POTENTIAL;

CRYSTALLIZATION;

EID: 0033513878     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00694-6     Document Type: Article

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