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Volumn 19, Issue 5, 2000, Pages 560-567

Parallelization of a Monte Carlo ion implantation simulator

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; COMPUTER WORKSTATIONS; INTERFACES (COMPUTER); ION IMPLANTATION; MONTE CARLO METHODS; THREE DIMENSIONAL; TWO DIMENSIONAL;

EID: 0033707307     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.845080     Document Type: Article
Times cited : (5)

References (16)
  • 4
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    • M. Posselt3D modeling of ion implantation into crystalline silicon: Influence of damage accumulation on dopant profiles, Nucl. Instrum. Meth. B, vol. 96, pp. 163-167, 1995.
    • Nucl. Instrum. Meth. B
    • Posselt, M.1
  • 5
    • 0023961148 scopus 로고    scopus 로고
    • Two-dimensional modeling of ion implantation induced point defects
    • vol. 7, pp. 174-180, Feb. 1988.
    • G. Hobler and S. SelberherrTwo-dimensional modeling of ion implantation induced point defects, IEEE Trans. Computer-Aided Design, vol. 7, pp. 174-180, Feb. 1988.
    • IEEE Trans. Computer-Aided Design
    • Hobler, G.1    Selberherr, S.2
  • 7
    • 0030398052 scopus 로고    scopus 로고
    • 3-dimensional simulation of thermal diffusion and oxidation processes
    • 1996, pp. 705-708.
    • V. Senez, S. Bozek, and B. Baccus3-dimensional simulation of thermal diffusion and oxidation processes, in Proc. Int. Electron Devices Meeting, 1996, pp. 705-708.
    • Proc. Int. Electron Devices Meeting
    • Senez, V.1    Bozek, S.2    Baccus, B.3
  • 12
    • 0024665146 scopus 로고    scopus 로고
    • Monte Carlo simulation of ion implantation into two- And three-dimensional structures
    • vol. 8, pp. 450- 4159, May 1989.
    • G. Hobler and S. SelberherrMonte Carlo simulation of ion implantation into two- and three-dimensional structures, IEEE Trans. Computer-Aided Design, vol. 8, pp. 450-4159, May 1989.
    • IEEE Trans. Computer-Aided Design
    • Hobler, G.1    Selberherr, S.2
  • 13
    • 0028378042 scopus 로고    scopus 로고
    • Monte Carlo simulation of ion implantation for three-dimensional structures using an octree
    • vol. E77-C, no. 2, pp. 118-123, 1994.
    • H. Stippel and S. SelberherrMonte Carlo simulation of ion implantation for three-dimensional structures using an octree, IEICE Trans. Electron., vol. E77-C, no. 2, pp. 118-123, 1994.
    • IEICE Trans. Electron.
    • Stippel, H.1    Selberherr, S.2
  • 14
    • 0001358341 scopus 로고    scopus 로고
    • Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation
    • vol. 77, no. 8, pp. 3697-3703, 1995.
    • G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, and G. StingederBoron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation, J. Appl. Phys., vol. 77, no. 8, pp. 3697-3703, 1995.
    • J. Appl. Phys.
    • Hobler, G.1    Simionescu, A.2    Palmetshofer, L.3    Tian, C.4    Stingeder, G.5
  • 16
    • 0042939273 scopus 로고    scopus 로고
    • The displacement of atoms in solids by radiation
    • vol. 18, pp. 1-51, 1955.
    • G. H. Kinchin and R. S. PeaseThe displacement of atoms in solids by radiation, Rep. Progress Phys., vol. 18, pp. 1-51, 1955.
    • Rep. Progress Phys.
    • Kinchin, G.H.1    Pease, R.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.