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International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 23-24

Three-dimensional simulation of ion implantation

(4) Lorenz, J a Tietzel, K a Bourenkov, A a Ryssel, H a,b

a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SEMICONDUCTOR DEVICES;

DOPANT PROFILE; PROCESS SIMULATION SOFTWARE; PROCESS SIMULATORS; THREE DIMENSIONAL DEVICE SIMULATIONS; THREE DIMENSIONAL EFFECT; THREE DIMENSIONAL ION IMPLANTATION; THREE DIMENSIONAL SIMULATIONS; ULSI DEVICES;

COMPUTER SOFTWARE;

EID: 78649842195 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.1996.865255 Document Type: Conference Paper

Times cited : (3)

References (10)

1
- 0004081050
- (ed. J. Lorenz), Springer Verlag, Wien, New York
- B. Baccus, S. Bozek, V. Senez, Z.Z. Wang, in: 3-Dimensional Process Simulation (ed. J. Lorenz), pp. 95, Springer Verlag, Wien, New York (1995)
- (1995) 3-Dimensional Process Simulation , pp. 95
- Baccus, B.¹ Bozek, S.² Senez, V.³ Wang, Z.Z.⁴

2
- 85061290082
- J. Lorenz, E. Bar, A. Burenkov, W. Henke, K. Tietzel, M. WeiB, ibid, pp. 109
- J. Lorenz, E. Bar, A. Burenkov, W. Henke, K. Tietzel, M. WeiB, ibid, pp. 109

3
- 85061275367
- E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, S. Selberherr, ibid, pp. 136
- Ibid , pp. 136
- Leitner, E.¹ Bohmayr, W.² Fleischmann, P.³ Strasser, E.⁴ Selberherr, S.⁵

4
- 85061231788
- M. Westermann, T. Feudel, N. Strecker, S. Gappisch, A. Hofler, W. Fichtner, ibid, pp. 162
- Ibid , pp. 162
- Westermann, M.¹ Feudel, T.² Strecker, N.³ Gappisch, S.⁴ Hofler, A.⁵ Fichtner, W.⁶

5
- 0022810649
- H. Ryssel, J. Lorenz, K. Hoffmann, Appl. Phys. A41, 201-207 (1986)
- (1986) Appl. Phys , vol.A41 , pp. 201-207
- Ryssel, H.¹ Lorenz, J.² Hoffmann, K.³

6
- 85061266886
- R.J. Wierzbicki, J.P. Biersack, A. Barthel, J. Lorenz, H. Ryssel, Radiat. Eff. Def. in Solids 129 (1994)
- (1994) Radiat. Eff. Def. in Solids , vol.129
- Wierzbicki, R.J.¹ Biersack, J.P.² Barthel, A.³ Lorenz, J.⁴ Ryssel, H.⁵

7
- 0042619329
- J. Lorenz, R.J. Wierzbicki, H. Ryssel, Nucl. Instrum. Meth. B96, 168 (1995)
- (1995) Nucl. Instrum. Meth , vol.B96 , pp. 168
- Lorenz, J.¹ Wierzbicki, R.J.² Ryssel, H.³

8
- 30244432929
- (ed. J.J. W. Miller), Boole Press, Dublin
- J. Lorenz, W. Kriiger, A. Barthel, in: Proceedings of the Sixth International Nasecode Conference (ed. J.J. W. Miller), p. 513, Boole Press, Dublin (1989)
- (1989) Proceedings of the Sixth International Nasecode Conference , pp. 513
- Lorenz, J.¹ Kriiger, W.² Barthel, A.³

9
- 85061230218
- (eds. H. Ryssel, P. Pichler), Springer Verlag, Wien, New York
- A. Burenkov, W. Bohmayr, J. Lorenz, H. Ryssel, S. Selberherr, in: Simulation of Semiconductor Devices and Processes Vol. 6 (eds. H. Ryssel, P. Pichler), Springer Verlag, Wien, New York, pp. 488-491 (1995)
- (1995) Simulation of Semiconductor Devices and Processes , vol.6 , pp. 488-491
- Burenkov, A.¹ Bohmayr, W.² Lorenz, J.³ Ryssel, H.⁴ Selberherr, S.⁵

10
- 2142688842
- Ph.D. Dissertation, ETH Zurich
- N. Hitschfeld, Grid Generation for Three-Dimensional Non-rectangular Semiconductor Devices, Ph.D. Dissertation, ETH Zurich, (1993)
- (1993) Grid Generation for Three-Dimensional Non-rectangular Semiconductor Devices
- Hitschfeld, N.¹

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