SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 1-2, 1995, Pages 163-167

3D modeling of ion implantation into crystalline silicon: influence of damage accumulation on dopant profiles

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039531301 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(94)00477-3 Document Type: Article

Times cited : (14)

References (16)

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3
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- A New Computationally-Efficient Two-Dimensional Model for Boron Implantation Into Single-Crystal Silicon
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4
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- The Institute of Electrical and Electronics Engineers, Piscataway, New Jersey
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6
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- (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1959
- Hane¹ Fukuma²

7
- 4243095706
- S. Selberherr, G. Stippel, E. Strasser, Springer, Wien, New York
- (1993) Simulation of Semiconductor Devices and Processes , vol.5 , pp. 361
- Simionescu¹ Hobler²

8
- 0028726851
- Crystal-trim and its application to investigations on channeling effects during ion implantation
- (1994) Radiation Effects and Defects in Solids , vol.130-131 , pp. 87
- Posselt¹

9
- 0027152967
- (1993) Mater. Res. Soc. Symp. Proc. , vol.279 , pp. 23
- Posselt¹

10
- 84919183533
- G.R. Srinivasan, K. Taniguchi, C.S. Murthy, The Electrochemical Society, Pennington, New Jersey
- (1995) Proc. 3rd Int. Symp. on Process Physics and Modeling in Semiconductor Technology , pp. 545
- Murthy¹ Posselt²

12
- 0001784855
- A note on integral equations of the kinchin-pease type
- (1969) Radiation Effects , vol.1 , pp. 15
- Sigmund¹

15
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- Computer studies of the reflection of light ions from solids
- (1976) Nuclear Instruments and Methods , vol.132 , pp. 647
- Oen¹ Robinson²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.