Two-Dimensional Modeling of Ion Implantation Induced Point Defects

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 7, Issue 2, 1988, Pages 174-180

  Hobler, Gerhard ^a   Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MATHEMATICAL STATISTICS - MONTE CARLO METHODS; SEMICONDUCTOR MATERIALS - DEFECTS;

BINARY COLLISION APPROXIMATION; ION-IMPLANTATION-INDUCED DAMAGE PROFILES; LINEAR COLLISION CASCADE THEORY; POINT DEFECT DISTRIBUTIONS; TWO-DIMENSIONAL MODELING;

SEMICONDUCTING SILICON;

EID: 0023961148     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.3147     Document Type: Article

References (23)

1. D. A. Antoniadis, “Oxidation-induced point defects in silicon”, J. Electrochem. Soc., vol. 129, no. 5, pp. 1093-1097, 1982.
2. D. Collard and K. Taniguchi, “IMPACTA point-defect-based two-dimensional process simulator: Modeling the lateral oxidation-enhanced diffusion of dopants in silicon”, IEEE Trans. Electron Dev., vol. ED-33, pp. 1454-1462, 1986.
3. J. D. Plummer et al., “Process simulators for silicon VLSI and high speed GaAs devices”, Integrated Circuits Lab. Stanford Univ., Stanford, CA, July 1986.
4. K. Cho, M. Numan, T. G. Finstad, W. K. Chu, J. Liu, and J. J. Wortman, “Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon”, Appl. Phys. Lett., vol. 47, no. 12, pp. 1321-1323, 1985.
5. T. E. Seidel, D. J. Lischner, C. S. Pai, R. V. Knoell, D. M. Maher, and D. C. Jacobson, “A review of rapid thermal annealing (RTA) of B, BF2 and As ions implanted into silicon”, Nucl. Instr. Meth., vol. B7/8, pp. 251-260, 1985.
6. K. B. Winterbon, Ion Implantation Range and Energy Deposition Distributions, vol. 2. New York: Plenum, 1975.
7. H. Matsumura and S. Furukawa: “Lateral spread of damage formed by ion implantation”, J. Appl. Phys., vol. 47, no. 5, pp. 1746-1751, 1976.
8. L. A. Christel, J. F. Gibbons, and S. Mylroie, “An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets”, J. Appl. Phys., vol. 51, no. 12, pp. 6176-6182, 1980.
9. M. T. Robinson and I. M. Torrens, “Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation”, Phys. Rev., vol. B9, no. 12, pp. 5008-5024, 1974.
10. M. Posselt and J. P. Biersack, “Influence of recoil transport on energy-loss and damage profiles”, Nucl. Instr. Meth., vol. B15, pp. 20-24, 1986.
11. D. A. Thompson, A. Golanski, K. H. Haugen, D. V. Stevanovic, G. Carter, and C. E. Christodoulides, “Disorder production and amorphisation in ion implanted silicon”, Rad. Eff., vol. 52, pp. 69-84, 1980.
12. D. A. Thompson and R. S. Walker, “Energy Spikes in Si and Ge due to Heavy Ion bombardment”, Rad. Eff., vol. 36, pp. 91-100, 1978.
13. C. Prunier, E. Ligeon, A. Bourret, A. C. Chami, and J. C. Oberlin, “Defects created by self-implantation in Si as a function of temperature and fluence”, Nucl. Instr. Meth., vol. B17, pp. 227-233, 1986.
14. E. F. Krimmel, H. Oppolzer, and H. Runge, “Transmission electron microscopical imaging of lateral implantation effects near mask edges in B + -implanted Si wafers”, Rev. Phys. Appl., vol. 13, pp. 791-795, Dec. 1978.
15. A. M. Mazzone, “Three-dimensional Monte Carlo simulations-Part II: Recoil phenomena”, IEEE Trans. Computer-Aided Design, vol. CAD-4, pp. 110-117, 1985.
16. J. Albers, “Monte Carlo calculation of one and two-dimensional particle and damage distributions for ionimplanted dopants in silicon”, IEEE Trans. Computer-Aided Design, vol. CAD-4, pp. 374-383, 1985.
17. G. Hobler, E. Langer, and S. Selberherr, “Two-dimensional modeling of ion implantation with spatial moments”, Solid-State Electron., vol. 30, no. 4, pp. 445-455, 1987.
18. G. H. Kinchin and R. S. Pease, “The displacement of atoms in solids by radiation”, Rep. Prog. Phys., vol. 18, pp. 1-51, 1955.
19. P. Sigmund, “A note on integral equations of the Kinchin-Pease type”, Rad. Eff., vol. 1, pp. 15-18, 1969.
20. M. J. Norgett, M. T. Robinson, and I. M. Torrens, “A proposed method of calculating displacement dose rates”, Nucl. Eng. Des., vol. 33, pp. 50-54, 1975.
21. S. Furukawa, H. Matsumura, and H. Ishiwara, “Theoretical considerations on lateral spread of implanted ions”, Jap. J. Appl. Phys., vol. 11, no. 2, pp. 134-142, 1972.
22. H. Runge, “Distribution of implanted ions under arbitrarily shaped mask edges”, Phys. Stat. Sol., vol. (a) 39, pp. 595-599, 1977.
23. K. B. Winterbon, “Calculating moments of range distributions”, Nucl. Instr. Meth., vol. B17, pp. 193-202, 1986.