Monte Carlo Simulation of Ion Implantation Damage Process in Silico

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 713-716

  Tian, S ^a   Morris, S J ^a   Morris, M ^a   Obradovic, B ^a   Tasch, A F ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT ENGINEERING; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; AMORPHOUS MATERIALS; APPROXIMATION THEORY; ARSENIC; BORON; BORON COMPOUNDS; COMPUTER SIMULATION; ION IMPLANTATION; SEMICONDUCTING SILICON;

DAMAGE MODELLING; DAMAGE PROCESS; DAMAGE PROFILES; IMPLANTATION DAMAGE; IMPURITY PROFILE; IN-SILICO; IONS IMPLANTATION; MONTE CARLO'S SIMULATION; NEW DAMAGE; PHYSICALLY BASED;

ION IMPLANTATION; CRYSTAL DEFECTS;

AS IMPLANTED IMPURITY PROFILES; BINARY COLLISION APPROXIMATION; DAMAGE PROFILES; ION IMPLANTATION DAMAGE PROCESS;

EID: 0030386798     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554080     Document Type: Conference Paper

References (6)

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