Parallelization of a Monte-Carlo ion implantation simulator for three-dimensional crystalline structures

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1999, Pages 103-106

  Hossinger, A ^a   Radi, M ^a   Scholz, B ^a   Fahringer, T ^a   Langer, E ^a   Selberherr, S ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; ION IMPLANTATION; MONTE CARLO METHODS; PARALLEL PROCESSING SYSTEMS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

MASTER-SLAVE APPROACH; MESSAGE PASSING INTERFACE (MPI);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033285301     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)