Optimum conditions of body effect factor and substrate bias in variable threshold voltage MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2312-2317

  Koura, Hiroshi ^a   Takamiya, Makoto ^a   Hiramoto, Toshiro ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Active mode; Body effect; Channel engineering; Low power; Standby mode; Substrate bias; Variable threshold voltage metal oxide semiconductor field effect transistor (VTMOS)

Indexed keywords

ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SIMULATION; SUBSTRATES; THRESHOLD VOLTAGE;

BODY EFFECT FACTOR; CHANNEL ENGINEERING; STANDBY MODE; SUBSTRATE BIAS; THRESHOLD VOLTAGE MOFETS;

MOSFET DEVICES;

EID: 0033689413     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2312     Document Type: Article

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