Shallow junction formation by polyatomic cluster ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 772-775

  Takeuchi, Daisuke ^a   Shimada, Norihiro ^a   Matsuo, Jiro ^a   Yamada, Isao ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON COMPOUNDS; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT MANUFACTURE; ION BEAMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS;

ACTIVATION EFFICIENCY; DECABORANE; POLYATOMIC CLUSTER ION IMPLANTATION; SHALLOW JUNCTION FORMATION; SHEET RESISTANCE;

ION IMPLANTATION;

EID: 0030360994     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)