Enhanced tunneling characteristics of PECVD silicon-rich-oxide (SRO) for the application in low voltage flash EEPROM

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 2021-2023

  Lin, C J ^a   Hsu, C C H ^a   Chen, H H ^a   Hong, G ^a   Lu, L S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; OXIDES; ROM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THIN FILMS;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); SILICON RICH OXIDE (SRO) FILMS;

SEMICONDUCTOR STORAGE;

EID: 0030287490     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543042     Document Type: Article

References (10)

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