Chemical and structural aspects of the irradiation behavior of SiO2 films on silicon

IEEE Transactions on Nuclear Science

Volumn 24, Issue 6, 1977, Pages 2102-2107

  Revesz, A G ^a  

^a Image Processing Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS - RADIATION EFFECTS;

SILICA;

EID: 0017690426     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1977.4329174     Document Type: Article

References (43)

1. The Si/SiO 2 interface has been reviewed from a chemical viewpoint: A. G. Revesz, J. Non-cryst. Solids 11, 309 (1973).
2. A. G. Revesz, Solid State Communications 10, 127 (1972).
3. A. G. Revesz, IEEE Trans. NS-18, No. 6, Dec. 1971, 113.
4. H. R. Phillip, J. Phys. Chem. Solids 32, 1935 (1971).
5. A. G. Revesz, Phys. Rev. Letters 27, 1578 (1971).
6. V. P. Prjanishkov et al., Proceedings of the IX International Conference on Glass, Versaille, 1971, 1, 119.
7. W. Primak, Phys. Rev. 110, 1240 (1958).
8. T. A. Dellin, D. A. Tichenov, and E. H. Barsis, J. Appl. Phys. 48, 1131 (1977).
9. W. Primak and R. Kampwirth, J. Appl. Phys. 40, 685 (1969).
10. R. A. Sigsbee and R. H. Wilson, Appl. Phys. Letters 23, 541 (1973).
11. T. W. O'Keefe and R. M. Hardy, Solid-State Electr. 11, 261 (1968).
12. W. C. Johnson, IEEE Trans. NS-22, 2144 (1975).
13. M. Simons and H. L. Hughes, IEEE Trans. NS-19, Dec. 1972, 282.
14. F. B. McLean, H. E. Boesch, and J. M. McGarrity, IEEE Trans. NS-23, 1506 (1976).
15. H. E. Boesch and J. M. McGarrity, IEEE Trans. NS-23, 1520 (1976).
16. J. M. Stevels and A. Kats, Philips Res. Rept. 11, 103 (1956).
17. R. A. Weeks, J. Appl. Phys. 27, 1376 (1956).
18. J. S. van Wieringen and A. Kats, Philips Res. Rept. 12, 432 (1957).
19. A. G. Revesz, IEEE Trans. ED-13, 97 (1965).
20. Y. Nishi, Jap. J. Appl. Phys. 10, 52 (1971).
21. P. J. Caplan et al., Surface Sci. 54, 33 (1976).
22. J. P. Mitchell and D. G. Denure, Solid-State Electr. 16, 825 (1973).
23. G. H. Sigel et al., IEEE Trans. NS-21, Dec. 1974, 56.
24. E. H. Nicollian et al., J. Appl. Phys. 42, 5664 (1971).
25. A. G. Revesz and R. J. Evans, J. Phys. Chem. Solids 30, 551 (1969).
26. K. H. Beckmann and N. J. Harrick, J. Electrochem. Soc. 118, 325 (1971).
27. H. Hughes and T. Pankey, private communication.
28. H. L. Hughes, IEEE Trans. NS-16, Dec. 1969, 195.
29. A. G. Revesz, J. Electrochem. Soc., in press.
30. L. F. Wagner and W. E. Spicer, Phys. Rev. B 9, 1512 (1974).
31. E. Kooi, Philips Res. Rept. 21, 477 (1966).
32. F. J. Grunthaner and J. Maserjian, IEEE Conference on Nuclear and Space Radiation Effects, Williamsburg, VA, July 1977.
33. Y. T. Yeow, D. R. Lamb, and S. D. Brothertan, J. Phys. D. 8, 1495 (1975).
34. P. Offermann, J. Appl. Phys. 48, 1890 (1977).
35. K. H. Zaininger and A. G. Holmes-Siedle, RCA Rev. 28, 208 (1967).
36. A. G. Revesz and B. Goldstein, Surface Sci. 14, 361 (1969).
37. C. L. Marquardt and G. H. Sigel, IEEE Trans. NS-22, 2334 (1975).
38. R. J. Powell and G. F. Derbenwick, IEEE Trans. NS-18, 99 (1971).
39. P. S. Winokur, J. M. McGarrity, and H. E. Boesch, IEEE Trans. NS-23, 1580 (1976).
40. R. A. Kjar and D. K. Nichols, IEEE Trans. NS-22, 2193 (1975)
41. M. Pepper, Thin Solid Films 14, S7 (1972).
42. K. O. Jeppson and C. M. Svenson, J. Appl. Phys. 48, 2004 (1977).
43. M. Nakagiri, Jap. J. Appl. Phys. 13, 1610 (1974).