Interface trap generation by FN injection under dynamic oxide field stress

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 1920-1926

  Chen, T P ^a,b   Li, Stella ^a   Fung, S ^a   Lo, K F ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Integrated circuit reliability; Mos devices; Mosfet's; Semiconductor device reliability; Silicon materials devices

Indexed keywords

ELECTRON TUNNELING; HOLE TRAPS; HYDROGEN BONDS; INTEGRATED CIRCUIT LAYOUT; INTERFACES (MATERIALS); MOSFET DEVICES; RELIABILITY; SEMICONDUCTING SILICON; STRESSES;

CHARGE PUMPING TECHNIQUE; DYNAMIC OXIDE FIELD STRESS; FOWLER-NORDHEIM TUNNELING; INTERFACE TRAP GENERATION; STRESS VOLTAGE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032165413     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711356     Document Type: Article

References (18)

1. D. J. Dumin, S. K. Mopuri, S. Vanchinathan, R. S. Scott, R. Subramoniam, and T. G. Lewis, High field related thin oxide wearout and breakdown, IEEE Trans. Electron Devices, vol. 42, p. 760, 1995.
2. R. S. Scott and D. J. Dumin, The charging and discharging of high-voltage stress-generated traps in thin silicon oxide, IEEE Trans. Electron Devices, vol. 43, p. 130, 1996.
3. R. S. Scott, N. A. Dumin, T. W. Hughes, D. J. Dumin, and B. T. Moore, Properties of high-voltage stress generated traps in thin silicon oxide, IEEE Trans. Electron Devices, vol. 43, p. 1133, 1996.
4. D. J. Dumin and S. Vanchinathan, Bipolar stressing, breaking, and trap generation in thin silicon oxides, IEEE Trans. Electron Devices, vol. 41, p. 936, 1994.
5. M. Sakashita, S. Zaima, and Y. Yasuda, Charge trapping and interface state generation in metal-oxide-semiconductor capacitors due to Fowler-Nordheim tunneling injection at low temperatures, J. Appl. Phys., vol. 67, p. 6903, 1990.
6. D. J. Dumin, K. J. Dickerson, and G. A. Brown, Extrapolation of high voltage stress measurements to low-voltage operation for thin silicon-oxide films, IEEE Trans. Rel, vol. 40, p. 102, 1991.
7. Y. Hokari, Stress voltage polarity dependence of thermally grown thin gate oxide wearout, IEEE Trans. Electron Devices, vol. 35, p. 1299, 1988.
8. D. J. Dumin, J. R. Cooper, K. J. Dickerson, and G. A. Brown, The polarity, field, and fluence dependence of interface trap generation in thin silicon oxide, Solid State Electron., vol. 35, p. 515, 1992.
9. R. E. Paulsen and M. H. White, Theory and application of charge pumping for the characterization of Si-SiO2 interface and near-interface oxide traps, IEEE Trans. Electron Devices, vol. 41, p. 1213, 1994.
10. D. J. DiMaria, T. N. Theis, J. R. Kirtley, F. L. Pesavento, and D. W. Dong, Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films, J. Appl. Phys., vol. 57, p. 1214, 1985.
11. S. D. Brorson, D. J. DiMaria, M. V. Fischetti, F. L. Pesavento, P. M. Solomon, and D. W. Dong, Direct measurement of the energy distribution of hot electrons in silicon dioxide, J. Appl. Phys., vol. 58, p. 1302, 1985.
12. A. G. Revesz, Chemical and structural aspects of the irradiation behavior of SiO films on silicon, IEEE Trans. Nucl. Sci., vol. NS-24, p. 2102, 1977.
13. R. Bellens, E. der Schrijver, G. Van den bosch, G. Groeseneken, P. Heremans, and H. E. Maes, On the hole-carrier-induced post-stress interface trap generation in n-channel MOS transistor, IEEE Trans. Electron Devices, vol. 41, p. 413, 1994.
14. S. Li, T. P. Chen, S. Fung, and C. D. Beling, Post-stress trap generation induced by oxide-field stress with FN injection, to be published.
15. E. Rosenbaum, Z. Liu, and C. Hu, The effects of oxide stress waveform on MOSFET performance, in Proc. 1EDM, 1991, p. 719.
16. _, Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions, IEEE Trans. Electron Devices, vol. 40, p. 2287, 1993.
17. P. Chaparala, J. S. Suehle, C. Messick, and M. Roush, Electric field dependent dielectric breakdown of intrinsic SiC>2 films under dynamic stress, in Proc. 1RPS, 1996, p. 61.
18. D. J. Dumin, K. Dickerson, M. Hall, W. Vigrass, and G. A. Brown, Correlation of wearout and breakdown in sub-10 nm silicon oxide, in 1EDM Tech. Dig., 1988, p. 718.