Instability of the behaviour of high resistivity silicon detectors due to the presence of oxide charges

Nuclear Inst. and Methods in Physics Research, A

Volumn 288, Issue 1, 1990, Pages 35-43

  Longoni, A ^a   Sampietro, M ^a   Struder L ^b  

^a POLITECNICO DI MILANO   (Italy)

^b MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; OXIDES - SPACE CHARGE; PHYSICS - HIGH ENERGY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES - SEMICONDUCTOR INSULATOR BOUNDARIES;

INTERFACES; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0025404939     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(90)90460-N     Document Type: Article

References (6)