Study of Punch Through Characteristics in Irradiated MOSFETs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2511-2520

  Paccagnella, A P ^a   Bisello, D B ^b   Da Rold, M ^c   Gotra, Yu ^d   Benetti, P ^e  

^a UNIVERSITY OF CAGLIARI   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d UNIVERSITY OF PAVIA   (Italy)

^e INFN SEZIONE DI PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; FREQUENCY RESPONSE; GATES (TRANSISTOR); NEUTRON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; THERMAL EFFECTS;

BULK DAMAGE; PUNCH THROUGH CHARACTERISTICS;

MOSFET DEVICES;

EID: 0028705541     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340609     Document Type: Article

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