Guard ring design for high voltage operation of silicon detectors

Nuclear Inst. and Methods in Physics Research, A

Volumn 337, Issue 1, 1993, Pages 44-52

  Evensen, Lars ^a   Hanneborg, Anders ^a   Avset, Berit Sundby ^a   Nese, Martin ^a  

^a SINTEF   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; LEAKAGE CURRENTS; OXIDES; PRODUCT DESIGN; RADIATION EFFECTS; SEMICONDUCTING SILICON; SILICON SENSORS; STABILITY; SUBSTRATES;

DEPLETION LAYERS; FLOATING DIFFUSION STRIPS; GUARD RINGS; RADIATION HARDNESS;

PARTICLE DETECTORS;

EID: 0027885519     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(93)91136-B     Document Type: Article

References (12)

1. Two-dimensional analysis and design considerations of high-voltage planar junctions equipped with field plate and guard ring
2. High-voltage planar devices using field plate and semi-resistive layers
3. Variation of lateral doping as a field terminator for high-voltage power devices
4. Closed-form analytical solutions for the breakdown voltage of planar junctions terminated with a single floating field ring
5. PISCES2 — Poisson and Continuity Equation Solver
6. A new microstrip detector with double-sided readout