CV and Hall effect analysis on neutron irradiated silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 330-334

  Biggeri, U ^a   Borchi, E ^a   Bruzzi, M ^a   Lazanu, S ^b   Li, Z ^c  

^a INFN SEZIONE DI FIRENZE   (Italy)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; HALL EFFECT; IRRADIATION; MATHEMATICAL MODELS; NEUTRONS; NUMERICAL METHODS; SEMICONDUCTOR JUNCTIONS; SILICON;

EFFECTIVE IMPURITY CONCENTRATION; FOUR POINT PROBE; POISSON EQUATION; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0031121035     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00006-5     Document Type: Article

References (15)

1. R. Wunstorf et al., Nucl. Instr. and Meth. A 315 (1992) 149.
2. U. Biggeri, E. Borchi, M. Bruzzi and S. Lazanu, Nucl. Instr. and Meth. A 360 (1995) 131.
3. U. Biggeri, E. Borchi, M. Bruzzi, S. Lazanu and Z. Li, IEEE Trans. Nucl. Sci. 43 (1996) 1599.
4. U. Biggeri, E. Borchi, M. Bruzzi, S. Lazanu and Z. Li, IEEE Trans. Nucl. Sci. 41 (1994) 964.
5. U. Biggeri, E. Borchi and M. Bruzzi et al., The self-annealing effect on neutron irradiated silicon detectors investigated using TSC analysis, presented at the 4th Int. Conf. on Adv. Technol. and Particle Phys., Como Italy, 3-7 October 1994; Nucl. Phys. B (Proc. Suppl.) 44 (1995) 488.
6. U. Biggeri, E. Borchi and M. Bruzzi et al., The self-annealing effect on neutron irradiated silicon detectors investigated using TSC analysis, presented at the 4th Int. Conf. on Adv. Technol. and Particle Phys., Como Italy, 3-7 October 1994; Nucl. Phys. B (Proc. Suppl.) 44 (1995) 488.
7. Z. Li, C.J. Li, V. Eremin and E. Verbitskaya, Nucl. Instr. and Meth. A 377 (1996) 265.
8. Z. Li, Proc. Comf. Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Vol. 46, eds. A. Baldini and E. Focardi (SIF Bologna, 1994) p. 109.
9. A. Chilingarov et al., Nucl. Instr. and Meth. A 360 (1995) 342.
10. Z. Li, Nucl. Instr. and Meth. A 342 (1994) 105.
11. J. Matheson, M.S. Robin and S.J. Watts, The effect of radiation induced defects on the performance of high resistivity silicon diodes, CERN RD20 Technical Report TN/36, January 1995.
12. G. Hall, these Proceedings (Int. Conf. on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 1996), Nucl. Instr. and Meth. A 388 (1997) 283.
13. M. Moll, H. Feick, E. Fretwurst, G. Lindstroem and T. Schulz, Nucl. Phys. B (Proc. Suppl.) 44 (1995) 468.
14. S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1986).
15. E. Borchi and M.B. Bruzzi, Riv. Nuovo Cimento 17 (1994) 30.