Electron irradiation effects in polyimide passivated inp/ingaas single heterojunction bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1708-1715

  Shatalov, Alexei ^a   Subramanian, S ^a   Chandrasekhar, S ^a  

^a Oregon State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS; HIGH ENERGY ELECTRON IRRADIATION; SINGLE HETEROJUNCTION BIPOLAR TRANSISTORS; WET CHEMICAL ETCHING TECHNIQUE;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON IRRADIATION; ETCHING; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYIMIDES; RADIATION DAMAGE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033311539     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819143     Document Type: Article

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