Degradation of dc characteristics of InGaAs/InP single heterojunction bipolar transistors under electron irradiation

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 840-849

  Bandyopadhyay, A ^a  

^a Oregon State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRON IRRADIATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

SINGLE HETEROJUNCTION BIPOLAR TRANSISTORS (SHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032663672     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760388     Document Type: Article

References (14)

1. C. A. Liechti Heterostructure microwave transistors for ultra-high-speed electronics in Microwave and Millimeterwave Heterostructure Transistors and Their Applications F. Ali I. Bahl and A. Gupta Eds. Boston MA: Artech House 1989.
2. G. A. Schrantz N. W. van Vonno W. A. Krull M. A. Rao S. I. Long and H. Kroemer Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors IEEE Trans. Nucl. Sci. vol. 35 pp. 1657-1661 Dec. 1988.
3. Y. Song M. E. Kim A. K. Oki M. E. Hafizi W. D. Murlin J. B. Camou and K. W. Kobayashi Effects on neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors IEEE Trans. Nucl. Sci. vol. 36 pp. 2155-2160 Dec. 1989.
4. J. A. Zoutendyk C. A. Goben and D. F. Berndt Comparison of the degradation effects of heavy ion electron and cobalt-60 irradiation in an advanced bipolar process IEEE Trans. Nucl. Sci. vol. 35 pp. 1428-1431 Dec. 1988.
5. C. A. Goben Study of the neutron-induced base current component in silicon transistors IEEE Trans. Nucl. Sci. vol. NS-12 pp. 134-146 1965.
6. x epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons IEEE Trans. Nucl. Sci. vol. 42 pp. 1550-1557 Dec. 1995.
7. H. S. Bennett Numerical simulations of neutron effects on bipolar transistors IEEE Trans. Nucl. Sci. vol. NS-34 pp. 1372-1375 Dec. 1987.
8. A. Wei S. L. Kosier R. D. Schrimpf W. E. Combs and M. DeLaus Excess collector current due to an oxide-induced emitter in irradiated npn BJT's IEEE Trans. Electron Devices vol. 42 pp. 923-927 1995.
9. X. Montagner P. Fouillat R. Briand R. D. Schrimpf A. Touboul K. F. Galloway M. C. Calvet and P. Calvel Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model IEEE Trans. Nucl. Sci. vol. 44 pp. 1922-1929 Dec. 1997.
10. J. J. Liou Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors J. Appl. Phys. vol. 69 pp. 3328-3334 1991.
11. H. Lin and S. Lee Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design Appl. Phys. Lett. vol. 47 pp. 839-841 1985.
12. R. W. Dutton Bipolar transistor modeling of avalanche generation for computer circuit simulation IEEE Trans. Electron Devices vol. ED-22 pp. 334-338 June 1975.
13. S. I. Miller Ionization rates for holes and electrons in silicon Phys. Rev. vol. 105 pp. 1246-1249 1957.
14. J. J. Liou C. I. Huang B. Bayraktaroglu D. C. Williamson and K. B. Parab Base and collector leakage currents of AlGaAs/GaAs heterojunction bipolar transistors J. Appl. Phys. vol. 76 pp. 3187-3193 1994.