Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1657-1661

  Schrantz, Gregory A ^a   van Vonno, Nicolaas W ^a   Krull, Wade A ^a   Rao, Muralidhar A ^b   Long, Stephen I ^b   Kroemer, Herbert ^b  

^a INTERSIL CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEUTRONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

RADIATION HARDNESS; RECOMBINATION MECHANISMS;

TRANSISTORS, BIPOLAR;

EID: 0024169258     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25516     Document Type: Article

References (15)

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