Transport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors

IEEE Transactions on Electron Devices

Volumn 34, Issue 2, 1987, Pages 185-198

  Tiwari, Sandip ^a   Wright, Steven L ^a   Kleinsasser, Alan W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

DOUBLE HETEROSTRUCTURE BIPOLAR FUNCTION TRANSISTORS; JBT; TRANSPORT PROPERTIES;

TRANSISTORS, BIPOLAR;

EID: 0023293402     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22906     Document Type: Article

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