DC characterisation of HBTs using the observed kink effect on the base current

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 531-539

  Sotoodeh, M ^a   Khalid, A H ^a   Rezazadeh, A A ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

EBERS-MOLL MODEL; GUMMEL PLOT; KINK EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032045156     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00214-1     Document Type: Article

References (10)

1. Kren, D. E., Rezazadeh, A. A., Rees, P. K. and Tothill, J. N., Electron. Lett., 1993, 29, 961.
2. Tiwari, S., IEEE Electron Device Lett., 1988, 9, 142.
3. Fricke, K., Hartnagel, H. L., Lee, W-Y. and Wurfl, J., IEEE Trans. Electron. Devices, 1992, 39, 1977.
4. Liou, J. J., Liou, L. L. and Huang, C. I., Solid-State Electron., 1993, 36, 1222.
5. Adhicari, N. and El-Nokali, M., Solid-State Electron., 1996, 39, 1021.
6. Liu, W., Electron. Lett., 1991, 27, 2115.
7. Getreu, I. E., Modeling the Bipolar Transistor, Elsevier, New York, 1978.
8. Ning, T. H. and Tang, D. D., IEEE Trans. Electron Devices, 1984, ED-31, 409.
9. Hanington, G. and Asbeck, P. M., Solid-State Electron., 1997, 41, 669.
10. Yang, K., East, J. R. and Haddad, G. I., Solid-State Electron., 1993, 36, 321.