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Volumn 46, Issue 5, 1999, Pages 850-858

Degradation of InGaAs/InP double heterojunction bipolar transistors under electron irradiation

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRON IRRADIATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

EID: 0032673702     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760389     Document Type: Article
Times cited : (8)

References (10)
  • 6
    • 33749797068 scopus 로고    scopus 로고
    • Degradation of DC characteristics of InGaAs/InP single heterojunction bipolar transistors under electron irradiation this issue pp. 840-849.
    • A. Bandyopadhyay S. Subramanian S. Chandrasekhar A. G. Dental and S. M. Goodnick Degradation of DC characteristics of InGaAs/InP single heterojunction bipolar transistors under electron irradiation this issue pp. 840-849.
    • Bandyopadhyay, A.1    Subramanian, S.2    Chandrasekhar, S.3    Dental, A.G.4    Goodnick, S.M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.