Compositional changes of silicon carbide induced by nitrogen implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 651-654

  Miyagawa, S ^a   Baba, K ^b   Ikeyama, M ^a   Saitoh, K ^a   Nakao, S ^a   Miyagawa, Y ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Technology Cent of Nagasaki   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CERAMIC MATERIALS; GRAPHITE; HYDROGEN; ION IMPLANTATION; NITROGEN; POLYCRYSTALLINE MATERIALS; RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

NUCLEAR RESONANCE ANALYSIS (NRA);

SILICON CARBIDE;

EID: 0031547631     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)01146-9     Document Type: Article

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