Hot-electron-induced electro-luminescence of gaas field-effect and bipolar transistors

1994 IEEE Princeton/Central Jersey Sarnoff Symposium, SARNOF 1994

Volumn , Issue , 1994, Pages

  Tkachenko, Y A ^a   Wei, C J ^a   Hwang, J C M ^a   Harris, T D ^b   Grober, R D ^b   Aucoin, L ^c   Shanfield, S ^c  

^a LEHIGH UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LIGHT; MESFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSISTORS;

ELECTROLUMINESCENCE SPECTRA; FIELD EFFECTS; JUNCTION FIELD EFFECTS; PINCHOFF;

ELECTRIC FIELD EFFECTS;

EID: 85063486100     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SARNOF.1994.655675     Document Type: Conference Paper

References (6)

1. R. Yamamoto, A. Higashisaka and F. Hasegawa, "Light emission and burnout characteristics of GaAs power MESFET's", IEEE Trans. Electron Devices, vol. ED-25, No. 6, pp. 567-573, June 1978.
2. H. P. Zappe and D. J. As, "Mechanisms for the emission of visible light from GaAs fieldeffect transistors", Appl. Phys. Lett., vol. 57, no. 27, pp. 2919-2921, Dec. 1990.
3. S. H. Wemple, W. C. Niehaus, H. Fukui, J. hin, H. M. Cox, J. C. M. Hwang, J. V. DiLorenzo and W. O. Schlosser, "Longterm and instantaneous bumout in GaAs power FET's: mechanisms and solutions", IEEE Trans. Electron Devices, vol. ED-28, no. 7, pp. 834-840, July 1980.
4. H. Q. Tsemg, W. R. Frensley and P. Saunier, "Light emission of power MESFET's under RF drive", IEEE Electron Device Lett., vol. EDL-1, no. 2, pp. 20-21, Feb. 1980.
5. Y. A. Tkachenko, Y. Lan, D. S. Whitefield, C. J. Wei, J. C. M. Hwang, L. Aucoin and S. Shanfield, "Accelerated dc screening of GaAs field-effect transistors for power slump tendency under RF overdrive", in U.S. Conf. GaAs Manufacturing Technology Dig., May 1994.
6. J. Chen, G. B. Gao, D. Huang, J. I. Chyi, M. S. Unlu and H. Morkoc, "Photon emission from avalanche breakdown in the collector junction of GaAsIAlGaAs heterojunction bipolar transistors, " Appl. Phys. Lett., vol. 55, no. 4, pp. 374-376, July 1989.