Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT's

IEEE Electron Device Letters

Volumn 19, Issue 10, 1998, Pages 370-372

  Van Meer, Hans ^a   Valenza, Matteo ^b   Van Der Zanden, Koen ^a   De Raedt, Walter ^a   Simoen, Eddy ^a   Schreurs, Dominique ^a,d   Kaufmann, Leon ^c  

^a IMEC   (Belgium)

^b Sciences et Techniques du Languedoc   (France)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032186923     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.720189     Document Type: Article

References (12)

1. L. D. Nguyen, L. E. Larson, and U. K. Mishra, "Ultra-high-speed modulation-doped field-effect transistors: A tutorial review," Proc. IEEE. vol. 80, pp. 494-518, Apr. 1992.
2. H. J. Siweris and B. Schick. "Analysis of noise upconversion in microwave FET oscillators," IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp. 233-241, Mar. 1985.
3. R. Plana, O. Llopis, J. Verdier, L. Escotte, T. Parra, M. Gayral, A. Cappy, and J. Graffeuil. "Low-frequency noise behavior of InP-based HEMT's and its connection with phase noise of microwave oscillators." in IEEE MTT-S Int. Microwave Symp. Dig., 1996, vol. 2, pp. 943-946.
4. M. S. Thuairaj, M. B. Das, J. M. Ballingall, P. Ho. P. C. Chao, and M. Y. Kao, "Low-frequency noise behavior of 0.15 μm gate-length lattice-matched and lattice-mismatched MODFET's on InP." IEEE Electron Device Lett., vol. 12. pp. 410-412, 1991.
5. 1-rAs HWMT's," IEEE Trans. Electron Devices, vol. 39. pp. 523-532, Mar. 1992.
6. P.Viktorovitch, P. Rojo-Romeo, J. L. Leclercq. X. Letartre, J. Tardy. M. Oustric. and M. Gendry. "Low-frequency noise sources in InAlAs/InGaAs MODFET's." IEEE Trans. Electron Devices, vol. 43, pp. 2085-2100, Dec. 1996.
7. 0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization." Appl. Phys. Lett., vol. 61. no. 8. 1992.
8. K. van der Zanden. Y. Baeyens. M. Van Hove. D. Schreurs. W. De Raedt. and M. Van Rossum, "W-band high-gain amplifier using InP dual-gate HEMT technology." in Proc. IPRM Conf., 1997. pp. 249-252.
9. J.M. Peransin, P. Vignaud, D. Rigaud, and L. K. J. Vandamme, "I/f noice in MODFET's at low drain bias." IEEE Trans. Electron Devices. vol. 37. pp. 2250-2253. Oct. 1990.
10. G. Bertuccio, G. De Geronimo, A. Lognoni, and A. Pullia, "Low-frequency gate current noise in high electron mobility transistors: Experimental analysis," IEEE Electron Device Lett., vol. 16. pp. 103-105, 1995
11. C. Meva'a, X. Lectartre, P. Rojo-Romeo, and P. Viktorovitch, "Low temperature MBE grown AllnAs: Investigation of current voltage and low frequency noise behavior of Schouky diodes." Solid-State Electron., vol. 41, no. 6, pp. 857-864, 1997.
12. G. B. Alers, K. S. Krisch, D. Monroe, B. E. Weir, and A. M. Chang. "Tunnelling current noise in thin gate oxides," Appl. Phys. Lett., vol. 69, no. 19, 2885-2887, 1996.