GaAs MESFET lifetime prediction using microwave waveform probing

47th ARFTG Conference Digest - Spring 1996: High Power RF/Microwave Device Measurements, ARFTG 1996

Volumn , Issue , 1996, Pages 67-69

  Tkachenko, Y A ^a,b   Wei, C J ^a   Hwang, J C M ^a  

^a LEHIGH UNIVERSITY   (United States)

^b Alpha Industries Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; THRESHOLD VOLTAGE;

ELECTRICAL STRESS; GATE VOLTAGES; INDUCED DEGRADATION; LIFETIME PREDICTION; MESFET TECHNOLOGY; PERFORMANCE RELIABILITY; PROBING TECHNIQUES; TIME DEPENDENCE;

MESFET DEVICES;

EID: 33749766692     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTG.1996.327165     Document Type: Conference Paper

References (4)

1. C.J. Wei, Y.A Tkachenko and J.C.M. Hwang, "Non-invasive waveform probing for nonlinear network analysis", Microwave Journal, Feb. 1994, pp. 122-126 .
2. Y.A. Tkachenko, C.J. Wei, J.W. Bao and J.C.M. Hwang, "Waveform analysis of GaAs MESFET breakdown," ARFTG Conf. Dig., 1995.
3. Y.A. Tkachenko, C.J. Wei, Y. Lan, D.S. Whitefield, J.C.M. Hwang, L. Aucoin and S. Shanfield, "Hot-electron-induced degradation of metal-semiconductor field-effect transistors", in IEEE GaAs IC Symp. Dig., 1994, .
4. Y.A. Tkachenko, PhD Thesis, Lehigh University, 1995.