Pulsed stress reliability investigations of Schottky diodes and HBTS

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1907-1910

  Schußler M ^a   Krozer, V ^b   Bock, K H ^c   Brandt, M ^a   Vecci, L ^d   Losi, R ^d   Hartnagel, H L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c IMEC   (Belgium)

^d UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; HOT CARRIERS; INTERFACES (MATERIALS); MASS TRANSFER; OPTICAL PROPERTIES; RELIABILITY; SCHOTTKY BARRIER DIODES; CARRIER CONCENTRATION; ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; ELECTROSTATICS; FAILURE ANALYSIS; SEMICONDUCTOR DEVICE TESTING; THERMAL STRESS;

ELECTRON STIMULATED DESORPTION (ESD); HUMAN BODY MODEL; PULSED STRESS RELIABILITY; TRANSMISSION LINE PULSES (TLP); BULK REACTIONS; FIELD ENHANCED MATERIAL TRANSPORT; HOT CHARGE CARRIER EFFECTS; INTERFACE REACTIONS; TRANSMISSION LINE PULSES;

SEMICONDUCTOR DEVICE TESTING; HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030274038     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00226-0     Document Type: Article

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