An order(N) tight-binding molecular dynamics study of intrinsic defect diffusion in silicon

Chemical Engineering Journal

Volumn 74, Issue 1-2, 1999, Pages 67-75

  Roberts, Bruce W ^a   Luo, Weiwei ^b   Johnson, Kurt A ^a   Clancy, Paulette ^b  

^a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^b Cornell University   (United States)

Author keywords

Intrinsic defect diffusion; Silicon; Tight binding molecular dynamics

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; COMPUTER SIMULATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; POINT DEFECTS; SILICON; TEMPERATURE;

INTERSTITIAL DIFFUSION; INTRINSIC DEFECT DIFFUSION; TIGHT BONDING MOLECULAR DYNAMICS; VACANCY DIFFUSION;

DIFFUSION IN SOLIDS;

MOLECULAR DIFFUSION;

EID: 0033167422     PISSN: 13858947     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1385-8947(99)00062-5     Document Type: Article

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