Effect of oxygen on the electrical activation and diffusion of ion-implanted boron

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 291-296

  Larsen, K Kyllesbech ^a   Stolk, P A ^a   Privitera, V ^a   van Berkum, J G M ^a   de Boer, W B ^a   Mannino, G ^a   Cowern, N E B ^a   Huizing, H G A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ION IMPLANTATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SUBSTRATES; SUPERSATURATION;

ELECTRICAL ACTIVATION; SPREADING RESISTANCE PROFILING (SRP);

SEMICONDUCTING SILICON;

EID: 0031380923     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (27)