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Volumn 469, Issue , 1997, Pages 163-173
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Point defects migration and agglomeration in Si at room temperature: The role of surface and impurity content
a a a a a a
a
CNR IMETEM
(Italy)
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Author keywords
[No Author keywords available]
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Indexed keywords
AGGLOMERATION;
CRYSTAL IMPURITIES;
CRYSTALLINE MATERIALS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
POINT DEFECTS;
THERMAL DIFFUSION IN SOLIDS;
THERMAL EFFECTS;
POINT DEFECTS MIGRATION;
SEMICONDUCTING SILICON;
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EID: 0031353211
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-469-163 Document Type: Conference Paper |
Times cited : (2)
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References (25)
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