High-quality 1.3-μm GaInAsP-BH-lasers fabricated by MOVPE and dry-etching technique

IEEE Photonics Technology Letters

Volumn 8, Issue 8, 1996, Pages 989-991

  Itoh, Masayuki ^b   Kondo, Yasuhiro ^b   Kishi, Kenji ^b   Yamamoto, Mitsuo ^b   Itaya, Yoshio ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC CURRENTS; HETEROJUNCTIONS; LASER RESONATORS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; ZINC;

BURIED HETERO LAYERS; LIGHT OUTPUT CURRENT CHARACTERISTICS; MESA WALLS; SEPARATE CONFINEMENT HETEROSTRUCTURE; STRAINED MULTIQUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0030214352     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.508713     Document Type: Article

References (4)

1. T. Matsui, K. Ohtsuka, H. Sugimoto, Y. Abe, and T. Ohishi, "1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen," Appl. Phys. Lett., vol. 56, pp. 1641-1642, 1990.
2. N. Nordell, J. Borgrind, O. Kjebon, and S. Lourdudoss, "MOVPE regrowth of semi-insulating InP around reactive ion etched laser mesas," Electron. Lett., vol. 23, pp. 926-927, 1991.
3. O. Kjebon, S. Lourdudos, B. Hammarlund, S. Lindgren, M. Rask, P. Ojala, G. Landgren, and B. Broberg, "1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen," Appl. Phys. Lett., vol. 59, pp. 253-255, 1991.
4. S. Matsumoto, M. Fukuda, K. Sato, Y. Itaya, and M. Yamamoto, "Highly reliable 1.55 μm GaInAsP laser diodes buried with semi-insulating iron-doped InP," Electron. Lett., vol. 30, pp. 1395-1306, 1994.