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Volumn , Issue , 1998, Pages 317-320
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Pulse-mode selective MOVPE method for high-quality strained InGaAsP MQW structure
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
HETEROJUNCTIONS;
LASER MODES;
LASER PULSES;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR QUANTUM WELLS;
PHOTOLUMINESCENCE SPECTRUM;
PULSE MODE EPITAXY;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0032288813
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (10)
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