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Volumn 8, Issue 2, 1996, Pages 179-181

All selective MOVPE grown BH-LD's fabricated by the novel self-alignment process

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ETCHING; HETEROJUNCTIONS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; PRESSURE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TEMPERATURE;

EID: 0030080721     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484233     Document Type: Article
Times cited : (31)

References (6)
  • 1
    • 0026628548 scopus 로고
    • DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE
    • T. Kato, T. Sasaki, K. Komatsu and I. Mito, "DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE," Electron. Lett., vol. 28, pp. 153-154, 1992.
    • (1992) Electron. Lett. , vol.28 , pp. 153-154
    • Kato, T.1    Sasaki, T.2    Komatsu, K.3    Mito, I.4
  • 2
    • 0344612082 scopus 로고
    • Selective MOVPE growth for photonic integration circuits
    • ThKl
    • T. Sasaki and I. Mito, "Selective MOVPE growth for photonic integration circuits," Tech. Dig. OFC '93, ThKl, pp. 210-212, 1993.
    • (1993) Tech. Dig. OFC '93 , pp. 210-212
    • Sasaki, T.1    Mito, I.2
  • 3
    • 0027611756 scopus 로고
    • InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
    • M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, "InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD," IEEE J. Quantum Electron., vol. 29, pp. 2088-2096, 1993.
    • (1993) IEEE J. Quantum Electron. , vol.29 , pp. 2088-2096
    • Aoki, M.1    Suzuki, M.2    Sano, H.3    Kawano, T.4    Ido, T.5    Taniwatari, T.6    Uomi, K.7    Takai, A.8
  • 4
    • 0346264644 scopus 로고
    • 1.55 μm wavelength-tunable MQW-DBR-LD's employing bandgap energy control in all selective MOVPE growth
    • TuB 5.3
    • S. Takano, T. Morimoto, T. Nakamura, H. Hasumi, M. Yamaguchi, T. Sasaki, and I. Mito, "1.55 μm wavelength-tunable MQW-DBR-LD's employing bandgap energy control in all selective MOVPE growth," Tech. Dig. ECOC '92, TuB 5.3, pp. 177-180, 1992.
    • (1992) Tech. Dig. ECOC '92 , pp. 177-180
    • Takano, S.1    Morimoto, T.2    Nakamura, T.3    Hasumi, H.4    Yamaguchi, M.5    Sasaki, T.6    Mito, I.7
  • 5
    • 0028514466 scopus 로고
    • Extremely small active stripe laser diodes (EXSAS-LD's) for 17 channel low threshold array
    • S. Kitamura, T. Sasaki, K. Komatsu, and M. Kitamura, "Extremely small active stripe laser diodes (EXSAS-LD's) for 17 channel low threshold array," Electron. Lett., vol. 30, pp. 1487-1488, 1994.
    • (1994) Electron. Lett. , vol.30 , pp. 1487-1488
    • Kitamura, S.1    Sasaki, T.2    Komatsu, K.3    Kitamura, M.4
  • 6
    • 0027906407 scopus 로고
    • Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures
    • T. Sasaki, M. Kitamura, and I. Mito, "Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures," J. Crystal Growth, vol. 132, pp. 435-443, 1993.
    • (1993) J. Crystal Growth , vol.132 , pp. 435-443
    • Sasaki, T.1    Kitamura, M.2    Mito, I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.