Low threshold and high uniformity for novel 1.3-μm-strained InGaAsP MQW DC-PBH LD's fabricated by the all-selective MOVPE technique

IEEE Photonics Technology Letters

Volumn 9, Issue 3, 1997, Pages 291-293

  Sakata, Y ^a,b   Inomoto, Y ^b   Saito, D ^b   Komatsu, K ^b   Hasumi, H ^b  

^a IEEE   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Etching less process; Laser diodes; MOVPE; Selective epitaxy; Strained MQW

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; HIGH TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; WAVEGUIDES;

ATMOSPHERIC CHEMICAL VAPOR DEPOSITION METHOD; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0031103724     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.556050     Document Type: Article

References (8)

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