Low-threshold strained multi-quantum well lasers fabricated by selective metalorganic vapor phase epitaxy without a semiconductor etching process

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 456-460

  Sakata, Y ^a   Morimoto, T ^a   Inomoto, Y ^a   Hasumi, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

LASER DIODES; MULTI-QUANTUM WELL LASERS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030677188     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00524-6     Document Type: Article

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