Improved selective growth of InP around dry-etched mesas by metalorganic chemical vapor deposition at low growth temperature

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 369-374

  Takemi, M ^a   Kimura, T ^a   Miura, T ^a   Goto, K ^a   Mihashi, Y ^a   Takamiya, S ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Dry etched mesa; High speed rotating susceptor MOCVD; InP; Selective embedding growth

Indexed keywords

EID: 0346513742     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666604     Document Type: Article

References (12)

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