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Volumn 8, Issue 3, 1996, Pages 361-363

A transceiver PIC for bidirectional optical communication fabricated by bandgap energy controlled selective MOVPE

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DISTRIBUTED FEEDBACK LASERS; INTEGRATED CIRCUIT MANUFACTURE; LIGHT MODULATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; TRANSCEIVERS;

EID: 0030104306     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481117     Document Type: Article
Times cited : (20)

References (4)
  • 4
    • 0027906407 scopus 로고
    • Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures
    • T. Sasaki, M. Kitamura, and I. Mito, "Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures," J. Crystal Growth, vol. 132, pp. 435-443, 1993.
    • (1993) J. Crystal Growth , vol.132 , pp. 435-443
    • Sasaki, T.1    Kitamura, M.2    Mito, I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.