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Volumn , Issue , 1996, Pages 761-764
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Strained MQW-BH-LDs and integrated devices fabricated by selective MOVPE
a a a a a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
HETEROJUNCTIONS;
QUANTUM WELL LASERS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR GROWTH;
STRAIN;
BURIED HETEROSTRUCTURES;
SELECTIVE METALLORGANIC VAPOR PHASE EPITAXY;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0029712489
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (13)
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