Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4

Journal of Crystal Growth

Volumn 165, Issue 3, 1996, Pages 222-226

  Son, Chang Sik ^a   Kim, Seong Il ^b   Kim, Yong ^b   Lee, Min Suk ^b   Kim, Moo Sung ^b   Min, Suk Ki ^b   Choi, In Hoo ^a  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; ATOMS; BINDING ENERGY; CARBON; CHEMICAL BONDS; EPITAXIAL GROWTH; GASES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CARBON ATOMS; CARBON CHLORATE GAS; HOLE CONCENTRATION; INDIUM GALLIUM ARSENIDE; MOLE FRACTION; VAN DER PAUW-HALL ANALYSIS;

SEMICONDUCTOR GROWTH;

EID: 0030217060     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00164-9     Document Type: Article

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