Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 178, Issue 3, 1997, Pages 213-219

  Watanabe, Noriyuki ^a   Ito, Hiroshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Carbon; CBr4; GaAs; MOCVD

Indexed keywords

ADSORPTION; CARBON; CARBON INORGANIC COMPOUNDS; CARRIER CONCENTRATION; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

CARBON TETRABROMIDE; TRIMETHYLGALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031187384     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01176-1     Document Type: Article

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