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Journal of Crystal Growth

Volumn 158, Issue 4, 1996, Pages 430-436

Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor deposition

(3) Ito, Hiroshi a Kurishima, Kenji a Watanabe, Noriyuki a

a NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER CONCENTRATION; COMPOSITION; CRYSTAL ORIENTATION; DISSOCIATION; ELECTRON TRANSPORT PROPERTIES; ETCHING; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUMERICAL ANALYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ATOMIC CONCENTRATION; ELECTRON MOBILITY; HOLE CONCENTRATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR DOPING;

EID: 0030080923 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00543-9 Document Type: Article

Times cited : (16)

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