High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1415-1416

  Ito, H ^a   Yamahata, S ^a   Shigekawa, N ^a   Kurishima, K ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Chemical vapour deposition; Heterojunction bipolar transistors

Indexed keywords

CARBON; CARRIER CONCENTRATION; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE MEASUREMENT; MICROWAVES; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CARBON DOPING; COLLECTOR CURRENT DENSITY; FREQUENCY DEPENDENCE; LOW RESISTANCE BASE LAYER; MAXIMUM OSCILLATION FREQUENCY; NARROW EMITTER MESA STRUCTURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030192263     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960915     Document Type: Article

References (12)

1. 4-doped InGaAs', J. Electronic Mater., 1994, 23, pp. 791-799
2. ITO, H., YAMAHATA, S., SHIGEKAWA, N., KURISHIMA, K., and MATSUOKA, Y.: 'High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD', Electron. Lett., 1995, 31, pp. 2128-2130
3. SONG, J.-I., HONG, W.-P., PALMSTRØM, C.J., HAYES, J.R., CHOUGH, K.B., and VAN DER GAAG, B.P.: 'Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy', Electron. Lett., 1993, 29, pp. 1893-1894
4. SONG, J.-I., HONG, W.-P., PALMSTRØM, C.J., VAN DER GAAG, B.P., and CHOUGH, K.B.: 'Millimetre-wave InP/InGaAs heterojunction bipolar transistors with a subpicosecond extrinsic delay time', Electron. Lett., 1994, 30, pp. 456-457
5. max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter'. Tech. Dig. GaAs IC Symp., 1995, pp. 163-166
6. max InAlAs/InGaAs heterojunction bipolar transistors'. Proc. IEDM, 1993, pp. 783-786
7. GEE, R.C., LIN, C.L., FARLEY, C.W., SEABURY, C.W., HIGGINS, J.A., KIRCHNER, P.D., WOODALL, J.M., and ASBECK, P.M.: 'InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped base and superlattice graded base-collector junctions', Electron. Lett., 1993, 29, pp. 850-851
8. SONG, J.-I., HONG, W.-P., PALMSTRØM, C.J., VAN DER GAAG, B.P., and CHOUGH, K.B.: 'Ultra-high-speed InP/InGaAs heterojunction bipolar transistors', Electron Dev. Lett., 1994, 15, pp. 94-96
9. T over 200GHz', Electron. Lett., 1995, 31, pp. 2044-2045
10. ITO, H., YAMAHATA, S., SHIGEKAWA, N., KURISHIMA, K., and MATSUOKA, Y.: 'Growth and characterisation of high-speed doped base InP/InGaAs heterojunction bipolar transistors by metalorganic chemical vapour deposition', Jpn J. Appl. Phys., 1996, 35, to be published
11. SEABURY, C.W., FARLEY, C.W., MCDERMOTT, B.T., HIGGINS, J.A., LIN, C.L., KIRCHNER, P.J., WOODALL, J.M., and GEE, R.C.: 'Base recombination in high performance InGaAs/InP HBTs'. Proc. Dev. Res. Conf, 1993, IVA-5
12. NAKAJIMA, H., and ISHIBASHI, T.: 'Monte Carlo analysis of nonequilibrium electron transport in InAlGaAs/InGaAs HBTs', IEEE Trans. Electron Dev., 1993, 40, pp. 1950-1956