Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl4

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 449-455

  Hong, Kyushik ^a   Pavlidis, Dimitris ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

Carbon doped; CCl4; InGaAs; Metalorganic chemical vapor deposition (MOCVD); Thermal annealing

Indexed keywords

EID: 0000755376     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666619     Document Type: Article

References (21)

1. F. Ren, T.R. Fullowan, J. Lothian, P.W. Wisk, C.R. Abernathy, R.F. Kopf, A.B. Emerson, S.W. Downey and S.J. Pearton, Appl. Phys. Lett. 59, 3613 (1991).
2. P. Enquist, J.A. Hutchby and T.J.d. Lyon, J. Appl. Phys. 63, 4485 (1988).
3. K. Kurishima, T. Kobayashi and U. Gosele, Appl. Phys. Lett. 60, 2496 (1992).
4. O. Nakayima, H. Ito, T. Nittomo and K. Nagata, Technical Digest Intl. Electron Device Mtg., San Francisco, CA, 673 (1990).
5. M.E. Hafizi, L.M. Paulowicz, L.T. Tran, D.K. Umemoto, D.C. Streit, A.K. Oki, M.E. Kim and K.H. Yen, Technical Digest GaAs IC Symp. New Orleans, 329 (1990).
6. P.M. Enquist, Appl. Phys. Lett. 57, 2348 (1990).
7. S.A. Stockman, G.E. Höfler, J.N. Bailargeon, K.C. Hsieh, K.Y. Cheng and G.E. Stillman, J. Appl. Phys. 72, 981 (1992).
8. L.W. Yang, P.D. Wright, V. Eu, Z.H. Lu and A. Majerfeld, J. Appl. Phys. 72, 2063 (1992).
9. H. Ito and T. Ishibashi, Jpn. J. Appl. Phys. 30, L944 (1991).
10. C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, T.R. Fullowan, A. Katz, A.S. Jordan and J. Kovalchick, J. Cryst. Growth 105, 375 (1990).
11. T.P. Chin, P.D. Kirchner, J.M. Woodal and C.W. Tu, Appl. Phys. Lett. 59, 2866 (1991).
12. K. Zhang, W. Hwang, D.L. Miller and L.W. Kapitan, Appl. Phys. Lett. 63, 2399 (1993).
13. C.J. Palmstrøm, B.P.V.d. Gaag, J.-I. Song, K.B. Chough, W.P. Hong, S.A. Schwarz and S. Novak, 21st Intl. Symp. on Compound Semiconductors, San Diego (1994).
14. S.A. Stockman, A.W. Hanson and G.E. Stillman, Appl. Phys. Lett. 60, 2903 (1992).
15. S.A. Stockman, A.W. Hanson, C.M. Colomb, M.T. Fresina, J.E. Baker and G.E. Stillman, J. Electron. Mater. 23, 791 (1994).
16. K. Hong and D. Pavlidis, 7th Intl. Conf. on InP and Rel. Mater., Sapporo, Japan, 144 (1995).
17. K. Hong, C. Klingelhöfer, F. Ducroquet, M.F. Nuban, E. Bearzi, D. Pavlidis, S.K. Krawczyk and G. Guillot, 7th Intl. Conf. on InP and Rel. Mater., Sapporo, Japan, 241 (1995).
18. G.S. Tompa, 4th Intl. Conf. Metal Organic Vapor Phase Epitaxy, Hakone, Japan (1988).
19. G.E. Höfler, H.J. Höfler, J.N. Holonyak and K.C. Hsieh, J. Appl. Phys. 72, 5318 (1992).
20. H.H. Lee, Fundamentals of Microelectronics Processing (McGraw Hill, 1990), p. 304.
21. B. Clerjaud, F. Gendron, M. Krause and W. Ulrici, Phys. Rev. Lett. 65, 1800 (1990).