Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 109-112

  Roehle, H ^a   Schroeter Janssen, H ^a   Kaiser, R ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

LARGE-AREA LP-MOVPE GROWTH;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030674786     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00508-8     Document Type: Article

References (4)

1. M. Hollfelder, H. Hardtdegen, R. Meyer, R. Carius and H. Lüth, J. Electron. Mater. 13 (1994) 603.
2. J. Hergeth, G. Lengeling, D. Schmitz and H. Jürgensen, High purity LP-MOVPE process of III/V compounds using an inert carrier gas with drastically reduced hazards, presented at the 6th Int. Conf. on Metalorganic Vapor Phase Epitaxy, Cambridge, MA, 1992.
3. 2 carrier, presented at EW-MOVPE VI, Gent, Belgium, June 1995, D 13.
4. H. Roehle and H. Schroeter-Janssen, in: Proc. of the 8th Int. Conf. on Indium Phosphide and Related Materials, 1996, to be published.