Development and electrical properties of undoped polycrystalline silicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 36, Issue 9, 1989, Pages 1915-1922

  Proano, R E ^a   Misage, R S ^a   Ast, D G ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLAY DEVICES--LIQUID CRYSTAL; INTEGRATED CIRCUITS; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON--CHARGE CARRIERS; SEMICONDUCTOR DEVICES, MOS;

CMOS INTEGRATED CIRCUITS; CMOS RING OSCILLATORS; DARK/PHOTOINDUCED LEAKAGE CURRENTS; GRAIN BOUNDARY TRAPS; THIN FILM TRANSISTORS; UNDOPED POLYCRYSTALLINE SILICON;

SOLID STATE DEVICES, THIN FILM;

EID: 0024739568     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34270     Document Type: Article

References (14)

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