Poly-si thin film transistors fabricated with rapid thermal annealed silicon films

Japanese Journal of Applied Physics

Volumn 30, Issue 11B, 1991, Pages L1924-L1926

  Bonnel, Madeleine ^a   Duhamel, Nicole ^a   Guendouz, Mohamed ^a   Haji, Lazhar ^b   Loisel, Bertrand ^a   Ruault, Patrick ^a  

^a ORANGE LABS   (France)

^b Inst Universitaire de Technologie   (France)

Author keywords

Low pressure chemical vapor deposition (LPCVD); Polysilicon; Rapid thermal annealing (RTA); Thin film transistor (TFT)

Indexed keywords

GLASS - SUBSTRATES; HEAT TREATMENT - ANNEALING; SEMICONDUCTING SILICON - THIN FILMS;

RAPID THERMAL ANNEALING; THIN FILM TRANSISTORS;

TRANSISTORS;

EID: 0026258097     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1924     Document Type: Article

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