Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs

Solid-State Electronics

Volumn 39, Issue 11, 1996, Pages 1577-1580

  Surya, C ^a   Wang, W ^a   Fong, W K ^a   Chan, C H ^a   Lai, P T ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHARGE CARRIERS; INTERFACES (MATERIALS); ION BEAMS; NITRIDING; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SILICA; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

BACK SURFACE GETTERING; FLICKER NOISE;

MOSFET DEVICES;

EID: 0030285442     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00069-X     Document Type: Article

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