Determination of interface state density of ULSI n-MOSFET by 1/f noise measurements

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 332-335

  Villa, S ^a   De Geronimo, G ^a   Pacelli, A ^a   Lacaita, A L ^a   Longoni, A ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES;

1/F NOISE; C-V MEASUREMENT; CHANNEL QUANTIZATION; INTERFACE STATE DENSITY; MOBILITY FLUCTUATIONS; MOS-FET; NMOSFET;

INTERFACE STATES;

EID: 84907525396     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194433     Document Type: Conference Paper

References (6)

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3. A. Pacelli, to appear on IEEE Trans. Electron Devices, July 1997.
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