Control of growth dynamics by the use of designed precursors for the MOCVD of electronic ceramics. Part II

Materials Science in Semiconductor Processing

Volumn 2, Issue 2, 1999, Pages 165-171

  Jones, A C ^a   Leedham, T J ^a   Wright, P J ^b   Crosbie, M J ^b   Williams, D J ^b   Davies, H O ^c   Fleeting, K A ^c   O'Brien, P ^c   Pemble, M E ^d  

^a Inorgtech Limited   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR GROWTH; STRONTIUM COMPOUNDS; TITANIUM DIOXIDE;

ELECTRONIC CERAMICS; LEAD ZIRCONATE TITANATE; LIGANDS; STRONTIUM BARIUM TANTALUM OXIDE;

CERAMIC MATERIALS;

EID: 0032668987     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00011-6     Document Type: Article

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